| PART |
Description |
Maker |
| MT5C1009DCJ-35/883C MT5C1009SOJ-35/883C MT5C1009F- |
128K x 8 SRAM with chip and output enable
128K x 8 SRAM WITH CHIP & OUTPUT ENABLE
Circular Connector; Body Material:Aluminum Alloy; Series:MS3110; No. of Contacts:21; Connector Shell Size:22; Connecting Termination:Solder; Circular Shell Style:Wall Mount Receptacle; Circular Contact Gender:Socket RoHS Compliant: No
128K x 8 SRAM WITH CHIP & OUTPUT ENABLE 128K的8的SRAM在芯
128K x 8 SRAM WITH CHIP & OUTPUT ENABLE
|
Austin Semiconductor
Electronic Theatre Controls, Inc.
|
| AM29LV010B-45RJC AM29LV010B-55JC AM29LV010B-55JE A |
A 20V Single N-Channel HEXFET Power MOSFET in a DirectFET ST Package
100V Single N-Channel HEXFET Power MOSFET in a SO-8 package
80V Single N-Channel HEXFET Power MOSFET in a SO-8 package
-40V Single P-Channel HEXFET Power MOSFET in a TSOP-6 (Micro 6) package
20V Dual N-Bidirectional HEXFET Power MOSFET in a 6-Lead FlipFET
30V N-Channel PowerTrench MOSFET 30VN沟道的PowerTrench MOSFET
-12V Single P-Channel HEXFET Power MOSFET in a TSSOP-8 package x8闪存EEPROM
1 Mb (128K x 8) Uniform Sector, Flash Memory 128K X 8 FLASH 3V PROM, 70 ns, PQCC32
x8 Flash EEPROM x8闪存EEPROM
|
Toshiba, Corp.
Advanced Micro Devices, Inc.
Spansion, Inc.
|
| AT49BV001A AT49BV001A-55JI AT49BV001A-55TI AT49BV0 |
128K x 8 (1M bit), 2.7-Volt Read and Write, Top or Bottom Boot Parametric Block Flash.
1-megabit (128K x 8) Single 2.7-volt Battery-Voltage⑩ Flash Memory
1-MEGABIT (128K X 8) SINGLE 2.7-VOLT BATTERY-VOLTAGE⒙ FLASH MEMORY
1-megabit (128K x 8) Single 2.7-volt Battery-Voltage Flash Memory
AC 12C 12#12 SKT RECP
JT 100C 100#22D SKT RECP
AT49BV001A(N)(T) [Updated 9/03. 18 Pages] 128K x 8 (1M bit). 2.7-Volt Read and Write. Top or Bottom Boot Parametric Block Flash.
AC 6C 3#16 3#4 SKT RECP
Circular Connector; No. of Contacts:55; Series:MS27508; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:22; Circular Contact Gender:Socket; Circular Shell Style:Box Mount Receptacle RoHS Compliant: No
1-megabit (128K x 8) Single 2.7-volt Battery-VoltageFlash Memory 1兆位128K的8）单2.7伏电池电压⑩闪存
1-megabit (128K x 8) Single 2.7-volt Battery-VoltageFlash Memory 128K X 8 FLASH 2.7V PROM, 55 ns, PQCC32
1-megabit (128K x 8) Single 2.7-volt Battery-Voltage??Flash Memory
|
ATMEL[ATMEL Corporation]
Atmel Corp.
Atmel, Corp.
|
| H838600R H8_38600R HD64338600R |
Renesas 16-Bit Single-Chip Microcomputer
16-Bit Single-Chip Microcomputer H8 Family / H8/300H Super Low Power Series
|
Renesas Electronics Corporation
|
| IS62LV1288LL IS62LV1288LL-45H IS62LV1288LL-45HI IS |
128K x 8 LOW POWER and LOW Vcc CMOS STATIC RAM 128K X 8 STANDARD SRAM, 55 ns, PDSO32
128K x 8 LOW POWER and LOW Vcc CMOS STATIC RAM 128K X 8 STANDARD SRAM, 70 ns, PDSO32
128K x 8 LOW POWER and LOW Vcc CMOS STATIC RAM 128K X 8 STANDARD SRAM, 45 ns, PDSO32
|
Integrated Silicon Solution, Inc.
|
| 28C010TRTDI-15 28C010TRPFB-15 28C010TRT2DI-12 28C0 |
1 Megabit (128K x 8-Bit) EEPROM 128K X 8 EEPROM 5V, 200 ns, DIP32
1 Megabit (128K x 8-Bit) EEPROM 128K X 8 EEPROM 5V, 200 ns, DFP32
1 Megabit (128K x 8-Bit) EEPROM 128K X 8 EEPROM 5V, 150 ns, DIP32
1 Megabit (128K x 8-Bit) EEPROM 128K X 8 EEPROM 5V, 150 ns, DFP32
1 Megabit (128K x 8-Bit) EEPROM 128K X 8 EEPROM 5V, 120 ns, DFP32
POT 200K OHM THUMBWHEEL CERM ST 128K X 8 EEPROM 5V, 200 ns, DFP32
150 x 32 pixel format, LED Backlight available 128K X 8 EEPROM 5V, 120 ns, DIP32
Low Profile Power Inductor; Inductor Type:Power; Inductance:1uH; Inductance Tolerance: /- 20 %; Series:HC2LP; Core Material:Ferrite; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes RoHS Compliant: Yes
CONNECTOR ACCESSORY
Film Capacitor; Voltage Rating:400VDC; Capacitor Dielectric Material:Polyester; Capacitance:0.068uF; Capacitance Tolerance: /- 10%; Lead Pitch:15mm; Leaded Process Compatible:No; Package/Case:F; Peak Reflow Compatible (260 C):No RoHS Compliant: No
|
http://
Maxwell Technologies, Inc
|
| CC1100 CC1150 |
CC1100 Single Chip Low Cost Low Power RF-Transceiver
|
ETC[ETC]
|
| CC1100 CC1150 |
CC1100 Single Chip Low Cost Low Power RF-Transceiver
|
Electronic Theatre Controls, Inc.
|
| LC5733 LC5733H |
SINGLE-CHIP 4-BIT MICROCOMPUTER WITH LCD DRIVERS FOR LOW-VOLTAGE,LOW-POWER USE
|
SANYO[Sanyo Semicon Device]
|
| M3062AFCVGP M30626FHPFP M30626FHPGP M30627FHPGP M3 |
Single-chip 16-bit CMOS microcomputer, ROM capacity = 128K 4K bytes, RAM capacity = 10K bytes
Single-chip 16-bit CMOS microcomputer, ROM capacity = 384K 4K bytes, RAM capacity = 31K bytes,
Single-chip 16-bit CMOS microcomputer, ROM capacity = 256K 4K bytes, RAM capacity = 20K bytes,
Single-chip 16-bit CMOS microcomputer, ROM capacity = 96K bytes, RAM capacity = 5K bytes
Single-chip 16-bit CMOS microcomputer, ROM capacity = 64K bytes, RAM capacity = 4K bytes
Single-chip 16-bit CMOS microcomputer, RAM capacity = 10K bytes
Single-chip 16-bit CMOS microcomputer, ROM capacity = 128K 4K bytes, RAM capacity = 10K bytes,
Single-chip 16-bit CMOS microcomputer, ROM capacity = 64K 4K bytes, RAM capacity = 4K bytes,
Single-chip 16-bit CMOS microcomputer, RAM capacity = 4K bytes
Single-chip 16-bit CMOS microcomputer, ROM capacity = 512K 4K bytes, RAM capacity = 31K bytes,
Single-chip 16-bit CMOS microcomputer, ROM capacity = 384K bytes, RAM capacity = 16K bytes
Single-chip 16-bit CMOS microcomputer, ROM capacity = 384K bytes, RAM capacity = 24K bytes
Single-chip 16-bit CMOS microcomputer, ROM capacity = 384K bytes, RAM capacity = 31K bytes
Single-chip 16-bit CMOS microcomputer, ROM capacity = 320K bytes, RAM capacity = 31K bytes
Single-chip 16-bit CMOS microcomputer, ROM capacity = 320K bytes, RAM capacity = 24K bytes
Single-chip 16-bit CMOS microcomputer, ROM capacity = 320K bytes, RAM capacity = 16K bytes
Single-chip 16-bit CMOS microcomputer, ROM capacity = 128K bytes, RAM capacity = 10K bytes
Single-chip 16-bit CMOS microcomputer, ROM capacity = 256K bytes, RAM capacity = 20K bytes
|
Renesas
|
| MBM29F200BC-70 MBM29F200BC-55 MBM29F200TC-55PFTN M |
Replaced by TPS2042B : 0.7A, 2.7-5.5V Dual (1In/2Out) Hi-Side MOSFET, Fault Report, Act-Low Enable 8-PDIP -40 to 85
Replaced by TPS2043B : 0.7A, 2.7-5.5V Triple (2In/3Out) Hi-Side MOSFET, Fault Report, Act-Low Enable 16-SOIC -40 to 85 128K X 16 FLASH 5V PROM, 90 ns, PDSO44
2M (256K X 8/128K X 16) BIT 200万（256 × 8/128K × 16）位
Replaced by TPS2042B : 0.7A, 2.7-5.5V Dual (1In/2Out) Hi-Side MOSFET, Fault Report, Act-Low Enable 8-SOIC 0 to 85 128K X 16 FLASH 5V PROM, 90 ns, PDSO44
PP PAK-7-8P HDWE PAK-CABLE RoHS Compliant: Yes 128K X 16 FLASH 5V PROM, 55 ns, PDSO44
Dual, Current-Limited, Power-Distribution Switches 8-MSOP-PowerPAD -40 to 85
Dual, Current-Limited, Power-Distribution Switches 8-SOIC -40 to 85
TOOLS, INSERTION, INSERTION, INSERTION/EXTRACTION TOOL, SB SERIES, 15 AMP, 30 AMP, 60 AMP, POWER CONNECTORS, APPLICATION TOOLING, ANDERSON POWER PRODUCTS
|
FUJITSU LTD
Fujitsu, Ltd.
Fujitsu Limited
http://
Fujitsu Component Limited.
|
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